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| FDP3651U N-Channel PowerTrench(R) MOSFET July 2006 FDP3651U N-Channel PowerTrench(R) MOSFET 100V, 80A, 15m Features * rDS(on)=13 m(Typ.), VGS = 10V, ID = 40A * Qg(TOT)=49 nc(Typ.), VGS = 10 V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse/Repetitive Pulse) Applications * DC/DC converters and Off-Line UPS * Distributed Power Architectures and VRMs * Primary Switch for 24V and 48V Systems * High Voltage Synchronous Rectifier DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS VGSS ID PD EAS TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Pulsed Avalanche Energy Operating and Storage Temperature Maximum lead temperature soldering purposes, 1/8" from case for 5 seconds (Note 2) (Note 1) Ratings 100 20 80 220 255 266 -55 to 175 300 Units V V A W mJ C C Thermal Characteristics RJA RJC Thermal Resistance , Junction to Ambient Thermal Resistance , Junction to Case 62 0.59 C/W C/W Package Marking and Ordering Information Device Marking FDP3651U Device FDP3651U Reel Size Tube Tape Width N/A Quantity 50 units (c)2006 Fairchild Semiconductor Corporation FDP3651U Rev. A 1 www.fairchildsemi.com FDP3651U N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 80V VGS = 0V VGS = 20V TC=150C 100 1 250 100 V A A nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = -250A VGS = 10V , ID = 80A VGS = 10V , ID = 40A VGS=10V, ID=40A,TJ=175oC 3.5 4.5 15 13 32 5.5 18 15 37 m V Dynamic Characteristics Ciss Coss Crss Qg(TOT) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = 25V,VGS = 0V f=1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 50V ID = 80A 4152 485 89 49 7 23 16 5522 728 118 69 9.8 pF pF pF nC nC nC nC Resistive Switching Characteristics t(on) td(on) tr td(off) tf t(off) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 50V, ID = 80A VGS = 10V, RGS = 5.0 15 16 32 14 64 27 29 52 26 78 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 80A ISD = 40A Is = 40 A, di/dt = 100A/s 0.99 0.88 70 202 1.25 1.0 105 303 V V ns nC Notes: 1. Pulse Test:Pulse Width<300us,Duty Cycle<2.0% 2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 , Starting TJ=25oC 2 FDP3651U Rev. A www.fairchildsemi.com FDP3651U N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID, DRAIN CURRENT (A) 5 VGS = 7V 100 80 60 40 20 0 VGS = 20V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 8V 4 3 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 8V VGS = 10V VGS = 7V 1 VGS = 20V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 20 40 60 80 100 120 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 RDS(on), ON-RESISTANCE (m) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.8 2.4 2.0 1.6 1.2 0.8 0.4 -80 ID = 80A VGS = 10V ID = 80A 50 40 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 175oC 30 20 10 0 TJ = 25oC -40 0 40 80 120 160 200 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 120 Figure 4. On-Resistance vs Gate to Source Voltage 1000 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 80 60 40 20 0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V 100 10 1 0.1 0.01 1E-3 0.0 TJ = 25oC TJ = -55oC TJ = 175oC TJ = 175oC TJ = 25oC TJ = -55oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDP3651U Rev. A www.fairchildsemi.com FDP3651U N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 45V 10000 VDD = 50V Ciss 8 6 4 2 0 CAPACITANCE (pF) VDD = 55V 1000 Coss Crss 100 f = 1MHz VGS = 0V 0 10 20 30 40 50 60 10 0.1 1 10 100 Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 100 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 100 ID, DRAIN CURRENT (A) 80 60 40 20 0 25 VGS=8V VGS=10V PACKAGE MAY LIMIT CURRENT IN THIS REGION 10 TJ = 150oC TJ = 25oC 1 -3 10 10 -2 10 10 10 10 tAV, TIME IN AVALANCHE(ms) -1 0 1 2 10 3 50 75 100 125 150 TC, CASE TEMPERATURE (oC) 175 Figure 9. Unclamped Inductive Switching Capability 500 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 10 P(PK), PEAK TRANSIENT POWER (W) 5 10us 100 ID, DRAIN CURRENT (A) VGS = 10V 4 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - T c ---------------------150 10 10 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 100us 1ms 1 SINGLE PULSE TJ=MAX RATED Tc=25oC 10 3 10ms DC SINGLE PULSE 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 200 10 -5 10 2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDP3651U Rev. A www.fairchildsemi.com FDP3651U N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJc x RJc + Tc 1E-3 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 13. Transient Thermal Response Curve 5 FDP3651U Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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